GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml

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Product Details:

Place of Origin: China
Brand Name: OEM
Certification: ISO9001

Payment & Shipping Terms:

Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after received your payment details working days after received your payment details
Payment Terms: T/T, Western Union, L/C

CAS:25617-97-4EINECS No.:247-129-0
MF:GaNAppearance:Crystal
Density:6.1g/mL,25/4℃MW:83.73
High Light:

silicon wafer substrate, silicon oxide wafer

 

 

GaN Gallium Nitride Single Crystal Wafer CAS 25617-97-4 with Density of 6.1g/mL

 

Typical Physical Properties of GaN Gallium Nitride Single Crystal Wafer

 

2” GaN Templates

ItemGaN-T-NGaN-T-S
DimensionsΦ 2”
Thickness15 μm, 20 μm, 30 μm, 40 μm30 μm, 90 μm
OrientationC-axis(0001) ± 1°
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.05 Ω.cm> 106 Ω.cm
Dislocation DensityLess than 1×108 cm-2
Substrate structureThick GaN on Sapphire(0001)
Useable Surface Area> 90%
PolishingStandard: SSP Option: DSP
PackagePackaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
 
 
 

2” -Standing GaN Substrates

ItemGaN-FS-NGaN-FS-SI
DimensionsΦ50.8mm ± 1mm
Marco Defect DensityALevel2 cm-2
B Level> 2 cm-2
Thickness350 ± 25 μm
OrientationC-axis(0001) ± 0.5°
Orientation Flat(1-100) ± 0.5°, 16.0 ± 1.0mm
Secondary Orientation Flat(11-20) ± 3°, 8.0 ± 1.0mm
TTV(Total Thickness Variation)<15 μm
BOW<20 μm
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.5 Ω.cm>106 Ω.cm
Dislocation DensityLess than 5×106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

 Free-standing GaN Substrates (Customized size)

ItemGaN-FS-10GaN-FS-15
Dimensions10.0mm Χ10.5mm14.0mmΧ 15.0mm
Marco Defect DensityALevel0 cm-2
B Level2 cm-2
ThicknessRank 300300 ± 25 μm
Rank 350350 ± 25 μm
Rank 400400 ± 25 μm
OrientationC-axis(0001) ± 0.5°
TTV(Total Thickness Variation)<15 μm
BOW<20 μm
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.5 Ω.cm>106 Ω.cm
Dislocation DensityLess than 5×106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

 

GaN-FS-N-1.5
ItemGaN-FS-N-1.5
Dimensions25.4mm ± 0.5mm 38.1mm± 0.5mm40.0mm ± 0.5mm45.0mm ± 0.5mm
Marco Defect DensityALevel2 cm-2
B Level> 2 cm-2
Thickness350 ± 25 μm
OrientationC-axis(0001) ± 0.5°
Orientation Flat(1-100) ± 0.5°   8 ± 1mm(1-100) ± 0.5°   12 ± 1mm(1-100) ± 0.5°   14 ± 1mm(1-100) ± 0.5° 14 ± 1mm
Secondary Orientation Flat(11-20) ± 3°     4 ± 1mm(11-20) ± 3°        6 ± 1mm(11-20) ± 3°        7 ± 1mm(11-20) ± 3° 7 ± 1mm
TTV(Total Thickness Variation)<15 μm
BOW<20 μm
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.5 Ω.cm>106 Ω.cm
Dislocation DensityLess than 5×106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

HR‐XRD Rocking Curves

 

Tag: silicon wafer,silicon wafer substrate,silicon oxide wafer

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