Product Details:
Place of Origin: China
Brand Name: OEM
Certification: ISO9001
Payment & Shipping Terms:
Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after received your payment details working days after received your payment details
Payment Terms: T/T, Western Union, L/C
| Crystal Structure: | FCC A=3.610Å | Growth Method: | Bridgeman |
|---|---|---|---|
| Surface Roughness: | 30~100 A | Purity: | 99.9999% |
| Melt Point: | 1083 °C | Boiling Point: | 2567 °C |
| High Light: | silicon substrate,silicon wafer substrate | ||
Cu Single Crystal for the substrate metal, alloy thin film materials and biomaterials
Typical Physical Properties of Cu Single Crystal
Crystal Structure | FCC a=3.610Å | |||
Growth Method | Bridgeman | |||
Density | 8.96 g/cm3 | |||
Melt Point | 1083 °C | |||
Boiling Point | 2567 °C | |||
Surface Roughness | 30~100 A | |||
Purity | 99.9999% | |||
Xrd and Rocking Curve of Cu Single Crystal
Orientation: <100>+/-2.0degree
Orientation: <110>+/-2.0degree
Orientation: <111>+/-2.0degree
Tag: silicon wafer,silicon substrate,silicon wafer substrate
