SrLaAlO4 Growing Single Crystals Substrate With Thermal Expansion Coefficient

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Product Details:

Place of Origin: China
Brand Name: OEM
Certification: ISO9001

Payment & Shipping Terms:

Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after received your payment details working days after received your payment details
Payment Terms: T/T, Western Union, L/C

Growth Method:CZDielectric Constant:~17
Chemical Stability:Insoluble In WaterDensity:5.92 G/cm3
Melt Point:1650 °CSurface:One Side Polished Or Both Sides Polished
High Light:

silicon wafer substrate,silicon oxide wafer

 

SrLaAlO4 single crystal substrate with thermal expansion coefficient

 

Breif intruduction of SrLaAlO4 single crystal substrate

 

SrLaAlO4 single crystal substrate  has no luan crystal and phase transition from the melting point to low temperature. 

It has the same structure with high temperature superconductor YBCO.

Thermal expansion coefficient is lower than other perovskite structure crystals.

Can deposition film to improve lattice mismatch and reduce stress.

Typical Physical Properties of SrLaAlO4 single crystal substrate

Crystal StructureTrtragonal
a=3.756Å
b=3.756Å
c=12.630Å
Growth MethodCZ
Density5.92 g/cm3
Melt Point1650 °C
Hardness6 (Mohn)
Dielectric Constant~17
Chemical StabilityInsoluble in water

 

Standard size of SrLaAlO4 single crystal substrate

5 x 3 mm

5 x 5 mm

6.35×6.35mm

10x5mm

10x10mm

12.7×12.7mm

 

Thickness of SrLaAlO4 single crystal substrate

0.5mm

 

Surface of SrLaAlO4 single crystal substrate

One side polished or both sides polished

 

 
Contact Details

Greenearth Industry Co.,Ltd
Contact Person: Ms. Linda

Tel: +86-19945681435