Cu Growing Single Crystals High Purity Alloy Thin Film Materials / Biomaterials

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Product Details:

Place of Origin: China
Brand Name: OEM
Certification: ISO9001

Payment & Shipping Terms:

Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after received your payment details working days after received your payment details
Payment Terms: T/T, Western Union, L/C

Crystal Structure:FCC A=3.610ÅGrowth Method:Bridgeman
Surface Roughness:30~100 APurity:99.9999%
Melt Point:1083 °CBoiling Point:2567 °C
High Light:

silicon substrate,silicon wafer substrate

 

Cu Single Crystal for the substrate metal, alloy thin film materials and biomaterials

 

Typical Physical Properties of Cu Single Crystal

Crystal Structure

FCC a=3.610Å

Growth Method

Bridgeman

Density

8.96 g/cm3

Melt Point

1083 °C

Boiling Point

2567 °C

Surface Roughness

30~100 A

Purity

99.9999%

 

Xrd and Rocking Curve of Cu Single Crystal

 

Orientation: <100>+/-2.0degree

 

Orientation: <110>+/-2.0degree

Orientation: <111>+/-2.0degree

 

Tag: silicon wafer,silicon substrate,silicon wafer substrate

 

 

Contact Details

Greenearth Industry Co.,Ltd
Contact Person: Ms. Linda

Tel: +86-19945681435