Nb Doped SrTiO3 Single Crystal Silicon Substrate One / Both Sides Polished

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Product Details:

Place of Origin: China
Brand Name: OEM
Certification: ISO9001

Payment & Shipping Terms:

Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after receiving payment details
Payment Terms: T/T, Western Union, L/C

Name:Nb Doped SrTiO3Resistivity:0.1 ~ 0.001 Ohm – Cm
Thickness:0.5mm Or 1.0mm Or Other Thickness The Customers RequestSurface:One Side Polished Or Both Sides Polished
Doping Concentration:0.01 ~ 0.001 Wt %Mobility (cm2/Vs):6.5-9
High Light:

silicon wafer substrate,silicon oxide wafer

 

Nb doped SrTiO3 single crystal substrate provide the electrode to the films and devices

 

Breif intruduction of Nb doped SrTiO3 single crystal substrate

Niobium doped strontium titanate and strontium titanate crystal has the similar structure, but NSTO has electrical conductivity.

Resistivity change range between 0.1 ~ 0.001 ohm – cm, according to the doping concentration  between 0.01 ~ 0.001 wt %. Provide the electrode to the  films and devices.

 

Typical Physical Properties of Nb doped SrTiO3 single crystal substrate

Doping concentration and resistivity corresponding table:

Nb doped SrTiO3 Grade

A

B

C

D

Nb Concentration (wt%)

        1

0.7

0.4

0.1

Resistivity (ohm-cm)

0.0035

0.007

0.05

0.08

Mobility (cm2/Vs)

 

9

8.5

8.5

6.5

 

Standard size of Nb doped SrTiO3 single crystal substrate

5 x 3 mm

5 x 5 mm

6.35×6.35mm

10x5mm

10x10mm

12.7×12.7mm

15x15mm

 

Thickness of Nb doped SrTiO3 single crystal substrate

0.5mm or 1.0mm or other thickness the customers request

 

Surface of Nb doped SrTiO3 single crystal substrate

One side polished or both sides polished

 

 

 
Contact Details

Greenearth Industry Co.,Ltd
Contact Person: Ms. Linda

Tel: +86-19945681435