KTaO3 Substrate Growing Single Crystals Superconducting Thin Film Application

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Place of Origin: China
Brand Name: OEM
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Packaging Details: 100g/bag or single wafer box packaging.
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CAS:12030-91-0EINECS No:234-747-0
MF:KTaO3Hardness:6 (Mohn)
Melt Point:~1500 °CRefractive Index:2.14
High Light:

silicon wafer substrate,silicon oxide wafer

 

KTaO3 Single Crystal Substrate in the application of superconducting thin film

 

Breif intruduction of KTaO3 Single Crystal Substrate

Potassium Tantalate single crystal is a new type of perovskite and pyrochlore structure crystal.

It has a broad market prospect in superconducting thin film application.

 

Typical Physical Properties of KTaO3 Single Crystal Substrate

Crystal Structure

Cubic Perovskite a=3.989Å

Growth Method

Top seed flux growth

Density

7.015 g/cm3

Melt Point

~1500 °C

Hardness

6 (Mohn)

Thermal conductivity

0.17w/m.k at 300K

Refractive index

2.14

Sellenmeyer equation

ho-1 =3.591l2 / (l2 –(0.193) 2 )

(l in mm, from 0.4 – 1.06 mm )

 

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