Product Details:
Place of Origin: China
Brand Name: OEM
Certification: ISO9001
Payment & Shipping Terms:
Minimum Order Quantity: Negotiable
Price: Negotiable
Packaging Details: 100g/bag or single wafer box packaging.
Delivery Time: 5-7 working days after received your payment details working days after received your payment details
Payment Terms: T/T, Western Union, L/C
| Growth Method: | CZ | Density: | 7.57 G/cm3 |
|---|---|---|---|
| Melt Point: | 1600 °C | Dielectric Constant: | 25 |
| Thickness: | 0.5mm | Surface: | One Side Polished Or Both Sides Polished |
| High Light: | silicon wafer substrate,silicon oxide wafer | ||
NdGaO3 single crystal substrate used for high temperature superconductor (YBCO)
Breif intruduction of NdGaO3 single crystal substrate
Neodymium gallium oxide substrate is a new kind of single crystal substrate materials developed in recent years, mainly used for high temperature superconductor (YBCO) and epitaxial film growth of magnetic materials
Typical Physical Properties of NdGaO3 single crystal substrate
| Crystal Structure | Orthorhombic | |||
| a=5.43 Å | ||||
| b=5.50 Å | ||||
| c=7.71 Å | ||||
| Growth Method | CZ | |||
| Density | 7.57 g/cm3 | |||
| Melt Point | 1600 °C | |||
| Dielectric Constant | 25 | |||
Standard size of NdGaO3 single crystal substrate
5 x 3 mm
5 x 5 mm
6.35×6.35mm
10x5mm
10x10mm
Thickness of NdGaO3 single crystal substrate
0.5mm
Surface of NdGaO3 single crystal substrate
One side polished or both sides polished
